features d trenchfet r power mosfets d new low thermal resistance powerpak t package with low 1.07-mm profile applications d battery and load switching -- notebook computers -- notebook battery packs si7483dp vishay siliconix new product document number: 71940 s-21441?rev. a, 19-aug-02 www.vishay.com 1 p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ? ) i d (a) 3 0 0.005 @ v gs =--10v -- 2 4 -- 3 0 0.0095 @ v gs =--4.5v -- 1 7 d s g p-channel mosfet 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak t so-8 bottom view absolute maximum ratings (t a =25 _ c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -- 3 0 v gate-source voltage v gs ? 20 v c o n t i n u o u s d r a i n c u r r e n t ( t j = 1 5 0 _ c ) a t a =25 _ c i d -- 2 4 -- 1 4 c on t i nuous d ra i n c urren t ( t j = 1 5 0 _ c ) a t a =70 _ c i d -- 1 9 -- 1 1 a pulsed drain current i dm -- 6 0 a continuous source current (diode conduction) a i s -- 4 . 5 -- 1 . 6 m a x i m u m p o w e r d i s s i p a t i o n a t a =25 _ c p d 5.4 1.9 w maximum power dissipation a t a =70 _ c p d 3.4 1.2 w operating junction and storage temperature range t j ,t stg --55 to 150 _ c thermal resistance ratings parameter symbol typical maximum unit m i j t i t a b i t a t 10 sec r 18 23 maximum junction-to-ambient a steady state r thja 50 65 _ c/w maximum junction-to-case (drain) steady state r thjc 1.0 1.5 c / notes a. surface mounted on 1? x 1? fr4 board.
si7483dp vishay siliconix new product www.vishay.com 2 document number: 71940 s-21441?rev. a, 19-aug-02 specifications (t j =25 _ c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds =v gs ,i d = --250 m a -- 1 . 0 -- 3 . 0 v gate-body leakage i gss v ds =0v,v gs = ? 20 v ? 100 na z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v ds =--24v,v gs =0v -- 1 m a zero gate voltage drain current i dss v ds =--24v,v gs =0v,t j =70 _ c -- 1 0 m a on-state drain current a i d(on) v ds =--5v,v gs =--10v -- 3 0 a d r a i n s o u r c e o n s t a t e r e s i s t a n c e a r d s ( ) v gs =--10v, i d =--24a 0.0041 0.005 ? ? forward transconductance a g fs v ds =--15v,i d =--24a 70 s diode forward voltage a v sd i s =--2.9a,v gs =0v --0.75 -- 1 . 1 v dynamic b total gate charge q g 120 180 gate-source charge q gs v ds =--15v, v gs =--10v,i d =--24a 18.3 nc gate-drain charge q gd 33.2 turn-on delay time t d(on) 25 40 rise time t r v d d =--15 v ,r l =15 ? 40 65 n s turn-off delay time t d(off) v d d = - - 1 5 v , r l = 1 5 ? ? -- 1 a , v gen =--10v,r g =6 ? 220 350 ns fall time t f 125 200 gate resistance r g 4 ? source-drain reverse recovery time t rr i f = --2.9 a, di/dt = 100 a/ m s 87 135 ns notes a. pulse test; pulse width 300 m s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 _ c unless noted) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 012345 v gs =10thru4v 25 _ c t c = 125 _ c -- 5 5 _ c output characteristics transfer characteristics v ds -- drain-to-source voltage (v) -- drain current (a) i d v gs -- gate-to-source voltage (v) -- drain current (a) i d 3v
si7483dp vishay siliconix new product document number: 71940 s-21441?rev. a, 19-aug-02 www.vishay.com 3 typical characteristics (25 _ c unless noted) 0.000 0.004 0.008 0.012 0.016 0.020 0246810 0.000 0.002 0.004 0.006 0.008 0.010 0 1020304050 0 2 4 6 8 10 0 20 40 60 80 100 120 0.6 0.8 1.0 1.2 1.4 1.6 --50 --25 0 25 50 75 100 125 150 0 2000 4000 6000 8000 10000 0 6 12 18 24 30 c rss c oss c iss v ds =15v i d =24a v gs =10v i d =24a v gs =4.5v gate charge on-resistance vs. drain current -- gate-to-source voltage (v) q g -- total gate charge (nc) v ds -- drain-to-source voltage (v) c -- capacitance (pf) v gs -- on-resistance ( r ds(on) ? ) i d -- drain current (a) capacitance on-resistance vs. junction temperature t j -- junction temperature ( _ c) (normalized) -- on-resistance ( r ds(on) ? ) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 t j =25 _ c t j = 150 _ c source-drain diode forward voltage v sd -- source-to-drain voltage (v) -- source current (a) i s i d =24 a on-resistance vs. gate-to-source voltage -- on-resistance ( r ds(on) ? ) v gs -- gate-to-source voltage (v) v gs =10v
si7483dp vishay siliconix new product www.vishay.com 4 document number: 71940 s-21441?rev. a, 19-aug-02 typical characteristics (25 _ c unless noted) -- 0 . 4 -- 0 . 2 0.0 0.2 0.4 0.6 0.8 --50 --25 0 25 50 75 100 125 150 i d = 250 m a threshold voltage variance (v) v gs(th) t j -- temperature ( _ c) 0 120 200 40 80 power (w) single pulse power time (sec) 160 10 -- 3 10 -- 2 1 10 600 10 -- 1 10 -- 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja =50 _ c/w 3. t jm -- t a =p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 110 0.1 0.01 0.001 safe operating area v ds -- drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t c =25 _ c single pulse -- drain current (a) i d 0.1 limited by r ds(on) dc 1ms 10 ms 100 ms 1s 10 s
si7483dp vishay siliconix new product document number: 71940 s-21441?rev. a, 19-aug-02 www.vishay.com 5 typical characteristics (25 _ c unless noted) 10 -- 3 10 -- 2 110 10 -- 1 10 -- 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance
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